GaN Technology | ROHM

 

 

GaN Technology


12/16
2:30pm PST
Add to Calendar
12/16
2:30pm PST
Add to Calendar

High Device Reliability

(VGS rating: 8V)

High Heat Dissipation

(Switching frequency >1 MHz)

Small Size

(5.0mm x 6.0mm x 1.0mm)

Copper Clip Junctions Minimize Parasitic Inductance

ROHM’s novel 150V GaN HEMT features an unprecedented 8V gate withstand voltage that solves the breakdown voltage problem utilizing an original structure, expands the voltage margin during device operation for greater reliability in power supply systems for industrial and communications.

Here’s a quick video that explains the unsurpassable advantage of GaN technology…


Key Features
ROHM’s newly developed GaN devices offer the following advantages.

1. Original structure extends the rated gate-source voltage to 8V
Existing GaN devices with a withstand voltage of 200V or less typically have a rated gate-source voltage of 6V with respect to a gate drive voltage of 5V, resulting in an extremely narrow voltage margin of just 1V. Exceeding the rated voltage can cause reliability problems such as degradation and destruction, plus the gate drive voltage requires high accuracy control, which has been a major obstacle to the widespread application of GaN devices.

In response, ROHM succeeded in raising the rated gate-source voltage from the typical 6V to an industry-leading 8V by adopting an original structure. This expands the voltage margin during device operation, so even if a voltage overshoot exceeding 6V occurs during switching, the device will not degrade, contributing to higher reliability of the power supply circuit.

2. Optimized package provides excellent heat dissipation and facilitates mounting
ROHM’s GaN device utilizes a versatile package that delivers superior heat dissipation with a proven track record for reliability and mountability. This enables easy replacement of existing silicon devices and simplifies handling during the mounting process. Furthermore, using copper clip junction packaging technology reduces parasitic inductance by 55% over conventional packages, maximizing device performance when designing circuits for high-frequency operation.

3. Achieves over 96.5% power supply efficiency in the high-frequency band.
These new products maximize device performance by increasing the rated gate-source voltage and adopting a low-inductance package, achieving high efficiency of 96.5% or more in the high 1MHz frequency band, contributing to improved efficiency and greater miniaturization in power supply equipment.


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Lorem ipsum dolor sit amet, consetetur sadipscing elitr, sed diam nonumy eirmod tempor invidunt ut labore et dolore magna aliquyam erat, sed diam voluptua. At vero eos et accusam et justo duo dolores et ea rebum. Stet clita kasd gubergren, no sea takimata sanctus est Lorem ipsum dolor sit amet. Lorem ipsum dolor sit amet, consetetur sadipscing elitr, sed diam nonumy eirmod tempor invidunt ut labore et dolore magna aliquyam erat, sed diam voluptua. At vero eos et accusam et justo duo dolores et ea rebum. Stet clita kasd gubergren, no sea takimata sanctus est Lorem ipsum dolor sit amet. Lorem ipsum dolor sit amet, consetetur sadipscing elitr, sed diam nonumy eirmod tempor invidunt ut labore et dolore magna aliquyam erat, sed diam voluptua. At vero eos et accusam et justo duo dolores et ea rebum. Stet clita kasd gubergren, no sea takimata sanctus est Lorem ipsum dolor sit amet.

Compact Infrared LED and phototransistor.


Focusing on the development of products with higher output and further miniaturization for sensor applications than conventional products.



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Lorem ipsum dolor sit amet, consetetur sadipscing elitr, sed diam nonumy eirmod tempor invidunt ut labore et dolore magna aliquyam erat, sed diam voluptua. At vero eos et accusam et justo.