Please complete the form below.
An email with the download URL will be sent to your email address.

Silicon Carbide Power Devices
Understanding & Application Examples Utilizing the Merits

Notes;

- Personal information must be handled according to the Rohm’s privacy policy. Your data entry to the form below should be considered that you read and agreed with the Rohm’s privacy policy.

- Rohm will use the information you provide for legitimate business purposes which may include sharing some information with related companies in the Rohm group and Rohm’s distributors, dealers and sales representatives. Your data entry to the form below should be considered that you agreed with the conditions above.

- Be sure to complete your email address. Incompleteness or an error makes undelivery of email.


Rohm will use the information you provide for the following purposes.

- For providing you Rohm’s materials.

- For providing you proposals or useful information of Rohm’s products.

- For investigation or analysis to develop and provide better products and services.

- Your inquiries will be transferred to a support representative of Rohm or distributors for your support.

ROHM’s seminar materials provided at the seminar venue.
Basic properties of silicon carbide(SiC) which has the potential for minimizing the size of power products, reducing power consumption, and enhancing efficiency, how to use SiC diodes and SiC MOSFETs, and application examples utilizing the merits are described.