A New Automotive Qualified High Current Isolated Gate Driver

Please complete the form below.
Information will be sent to your email address.

Notes;

- Personal information must be handled according to the ROHM’s privacy policy. Your data entry to the form below should be considered that you read and agreed with the ROHM’s privacy policy.

- ROHM will use the information you provide for legitimate business purposes which may include sharing some information with related companies in the ROHM group and ROHM’s distributors, dealers and sales representatives. Your data entry to the form below should be considered that you agreed with the conditions above.

- Be sure to complete your email address. Incompleteness or an error makes undelivery of email.


ROHM will use the information you provide for the following purposes.

- For providing you ROHM’s materials.

- For providing you proposals or useful information of ROHM’s products.

- For investigation or analysis to develop and provide better products and services.

- Your inquiries will be transferred to a support representative of ROHM or distributors for your support.

In this video we would like to introduce a new high-current isolated gate driver suitable for a variety of applications, from silicon MOSFETs and IGBTs to the latest high power SiC MOSFETs. This new driver is capable of sourcing and sinking 20 amperes of current.  We will also review key characteristics used to select the optimum Gate Driver and additional features that improve system robustness.

Presenter :
Mitch Van Ochten, Applications Engineer.

Mitch Van Ochten is currently an Applications Engineer for ROHM Semiconductor. His power electronics experience includes design of Gate Drivers for High Frequency Welders and for a 2.2 MW Wind Turbine Converter. Mitch is a Senior Member of the IEEE and holds five US Patents.